Optical and Structural Features of Silicon-Rich Hydrogenated Amorphous Silicon Nitride Thin Films

被引:2
|
作者
Singh, Sarab Preet [1 ]
Oton, Claudio J. [2 ]
Srivastava, P. [1 ]
Ghosh, Santanu [1 ]
Prakash, G. Vijaya [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Nanophoton & Nanostech Labs, New Delhi 110016, India
[2] Univ Politecn Valencia, Valencia Nanophoton Technol Ctr, Valencia 46022, Spain
关键词
Silicon-Rich Silicon Nitride; Phase Stabilization; Silicon Nanocrystals; Photoluminescence; QUANTUM CONFINEMENT; WAVE-GUIDES; PHOTOLUMINESCENCE; SIZE; GAIN;
D O I
10.1166/jnn.2011.4091
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A systematic study of fabrication and effect of post-deposition processing on the optical and structural features of silicon-rich hydrogenated amorphous silicon nitride thin films deposited by Hg-sensitized Photo-Chemical Vapour Deposition technique is presented. Both deposition parameters and post-deposition thermal treatment resulted into substantial change in the refractive index associated with the densification of the film. Our studies reveal that the presence of hydrogen and its out-diffusion upon thermal treatment play a crucial role in the overall structural evolution, specially the stabilization of individual phases such as Si and Si3N4. We further report the room-temperature photoluminescence from as-deposited films, which is due to formation of silicon nanostructures in crystalline and amorphous forms. These studies are of great interest from the prospective of commercially viable Si-based technology.
引用
收藏
页码:10733 / 10736
页数:4
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