Influence of atomic -scale defect on thermal conductivity of single - layer MoS 2 sheet

被引：0

作者：

Chen, Dongsheng ^{[1
]}

Chen, Haifeng ^{[1
]}

Hu, Shiqian ^{[2
]}

Guo, Hang ^{[3
,4
]}

Sharshir, Swellam W. ^{[5
]}

An, Meng ^{[1
,6
]}

Ma, Weigang ^{[6
]}

Zhang, Xing ^{[6
]}

机构：

[1] Shaanxi Univ Sci & Technol, Coll Mech & Elect Engn, Xian 710021, Peoples R China

[2] Univ Tokyo, Dept Mech Engn, Tokyo 1538505, Japan

[3] Northwestern Polytech Univ, Ctr Nano Energy Mat, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[4] Shaanxi Joint Lab Graphene NPU, Xian 710072, Peoples R China

[5] Kafrelsheikh Univ, Fac Engn, Mech Engn Dept, Kafrelsheikh, Egypt

[6] Tsinghua Univ, Dept Engn Mech, Key Lab Thermal Sci & Power Engn, Minist Educ, Beijing 100084, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 831卷

关键词：

THERMOELECTRIC PROPERTIES; MOLYBDENUM-DISULFIDE; COMPUTER-SIMULATION; MONOLAYER MOS2; PERFORMANCE; SCATTERING; GRAPHENE; EQUILIBRIUM; TRANSPORT; CLUSTERS;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页数：7

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