Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system

被引：1

作者：

Wang, Ruoyin ^{[1
]}

Huang, Xueliang ^{[1
]}

Li, Jiacheng ^{[2
]}

机构：

[1] Southeast Univ, Sch Elect Engn, Nanjing, Peoples R China

[2] Nanjing Univ Technol, Coll Elect Engn & Control Sci, Nanjing, Peoples R China

来源：

JOURNAL OF POWER ELECTRONICS | 2022年 / 22卷 / 05期

关键词：

Wireless power transfer; Junction temperature; Variable delay-switch adjustment method (VDAM); Anti-saturation; POWER; RELIABILITY; FAILURE; CREEP;

D O I：

10.1007/s43236-022-00393-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of SiC MOSFET junction temperature fluctuation in wireless charging systems must be addressed immediately. The existing temperature fluctuation suppression technique requires a large number of additional switches and capacitors. This study further optimizes the temperature fluctuation tracking suppression (TFTS) strategy. This method realizes closed-loop temperature adjustment and greatly simplifies the system structure. In addition, an optimized TFTS (OTFTS) strategy combined with an optimized proportional-integral-derivative control method is proposed to solve integral saturation and the subsequent control instability phenomenon. Then, a 5.5 kW experimental system is built. Results show that the OTFTS strategy eliminates 17.9 degrees C junction temperature fluctuation on the basis of reducing the hardware cost. It also has a good dynamic response and junction temperature fluctuation suppression effect.

引用

页码：859 / 869

页数：11

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