Ultraminiaturized Wideband Quasi-Chebyshev/-Elliptic Impedance-Transforming Power Divider Based on Integrated Passive Device Technology

被引:29
作者
Kong, Mengdan [1 ]
Wu, Yongle [1 ]
Zhuang, Zheng [1 ]
Wang, Weimin [1 ]
Wang, Cong [2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Harbin Inst Technol, Sch Elect & Informat Engn, Harbin 150001, Peoples R China
基金
北京市自然科学基金;
关键词
Impedance-transforming; integrated passive device (IPD); power dividers (PDs); ultraminiaturized; wideband; IPD TECHNOLOGY; BROAD-BAND; AMPLIFIER; COUPLER; FILTERS; DESIGN; MIXER;
D O I
10.1109/TPS.2020.2980029
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
This article presents the ultraminiaturized wideband quasi-Chebyshev and -elliptic low-pass power dividers (PDs) with an impedance-transforming function using integrated passive device (IPD) technology, occupying only the sizes of 1.1 x 1.2 mm(2) and 1.1 x 1.6 mm(2), respectively. The generalized quasi-Chebyshev low-pass matching network with the detailed design procedure is utilized to construct the circuit schematic of the proposed wideband PD. In order to further improve stopband rejection, a quasi-elliptic network is introduced, resulting in an extra transmission zero (TZ). For demonstration, the quasi-Chebyshev and -elliptic PDs based on IPD technology are designed, manufactured, and measured, respectively. Measurements indicate that the quasi-elliptic PD with TZ shows good electrical responses, including lower than 1.08-dB insertion loss, all better than 15-dB return loss and isolation from 2.49 to 5.0 GHz.
引用
收藏
页码:858 / 866
页数:9
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