Optimization of (002)-oriented ZnO film synthesis in sol-gel process and film photoluminescence property

被引:10
作者
Yan Jun-Feng [1 ]
Zhao Li-Li [1 ]
Zhang Zhi-Yong [1 ]
机构
[1] NW Univ Xian, Sch Informat Sci & Technol, Xian 710069, Peoples R China
关键词
D O I
10.1088/0256-307X/25/6/091
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By orthogonal design theory, technological parameters of the (002)-oriented ZnO film prepared in sol-gel process are optimized. A set of technological parameters for growing highly (002)-oriented ZnO film is obtained. As a result, it is proven that the Zn2+ concentration is the most important factor to grow a highly (002)-oriented ZnO film. We take an appropriate Zn2+ concentration 0.35 mol/L for the aimed film, of which photoluminescence property is better than those of the films derived from other Zn2+ concentrations precursor solution. The Zn2+ concentration either larger or smaller than 0.35 mol/L leads to the (002)-oriented degree decrease of films. By employing an atom force microscope, a hexagonal atom arrangement, which indicates that the film site detected is a ZnO single crystal, is observed in the surface of the highly (002)-oriented film.
引用
收藏
页码:2253 / 2256
页数:4
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