Optical properties of Si nanocrystals formed with laser pulse annealing

被引：5
|
作者：
Volodin, V. A. [1 ,2 ]
机构：
[1] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia
[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Lavrentiev Ave 13, Novosibirsk 630090, Russia
来源：
MATERIALS TODAY-PROCEEDINGS | 2017年 / 4卷 / 11期
关键词：
Silicon nanocrystals; pulse annealing; Raman scattering; hydrogenated amorphous silicon; silicon nitride; silicon oxide; SILICON FILMS; CRYSTALLIZATION; SPECTROSCOPY;
D O I：
10.1016/j.matpr.2017.09.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：11402 / 11405
页数：4
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