Monolayer oxidation on Si(001)-(2 x 1) studied by means of reflectance difference spectroscopy

被引：13

作者：

Ohno, S. ^{[1
]}

Kobayashi, H. ^{[1
]}

Mitobe, F. ^{[1
]}

Suzuki, T. ^{[2
]}

Shudo, K. ^{[1
]}

Tanaka, M. ^{[1
]}

机构：

[1] Yokohama Natl Univ, Fac Engn, Dept Phys, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

[2] Natl Def Acad, Dept Appl Phys, Sch Appl Sci, Yokosuka, Kanagawa 2368686, Japan

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 08期

关键词：

BY-LAYER OXIDATION; THERMAL-OXIDATION; INITIAL OXIDATION; GROWTH; SURFACES; SI(100); ADSORPTION; EVOLUTION; KINETICS; STM;

D O I：

10.1103/PhysRevB.77.085319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal growth of the first oxide layer on a single-domain Si(001)-(2 x 1) surface has been investigated by means of reflectance difference spectroscopy. The transition temperature between two different growth modes, namely, Langmuir-type adsorption and two-dimensional island growth, was identified from Arrhenius plots of the oxidation periods for the growth of an oxide monolayer. The activation energy for the growth of an oxide monolayer was estimated to be epsilon(1)=0.16 +/- 0.03 eV. The activation energy at low coverage was estimated to be epsilon(*)(1)=0.26 +/- 0.03 eV from analysis of the initial slope of the uptake curves. Our results demonstrate that a finite activation energy exists for monolayer oxide formation on Si(001)-(2 x 1) at high temperatures.

引用

页数：6

共 31 条

[1] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
[2] STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION
AVOURIS, P
CAHILL, DG
[J]. ULTRAMICROSCOPY, 1992, 42 : 838 - 844
[3] Probing the Si-Si dimer breaking of Si(100)2x1 surfaces upon molecule adsorption by optical spectroscopy
Borensztein, Y
Pluchery, O
Witkowski, N
[J]. PHYSICAL REVIEW LETTERS, 2005, 95 (11)
[4] DIRECT OBSERVATION OF THE LAYER-BY-LAYER GROWTH OF INITIAL OXIDE LAYERS ON SI(100) SURFACE DURING THERMAL-OXIDATION
BORMAN, VD
GUSEV, EP
LEBEDINSKII, YY
TROYAN, VI
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (17) : 2387 - 2390
[5] Oxidation of step edges on Si(001)-c(4 X 2)
Chung, C-H.
Yeom, H. W.
Yu, B. D.
Lyo, I-W.
[J]. PHYSICAL REVIEW LETTERS, 2006, 97 (03)
[6] Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy
Enta, Y
Takegawa, Y
Suemitsu, M
Miyamoto, N
[J]. APPLIED SURFACE SCIENCE, 1996, 100 : 449 - 453
[7] Adsorption of triplet O2 on Si(100):: The crucial step in the initial oxidation of a silicon surface -: art. no. 016101
Fan, XL
Zhang, YF
Lau, WM
Liu, ZF
[J]. PHYSICAL REVIEW LETTERS, 2005, 94 (01)
[8] Understanding the optical anisotropy of oxidized Si(001) surfaces
Fuchs, F
Schmidt, WG
Bechstedt, F
[J]. PHYSICAL REVIEW B, 2005, 72 (07)
[9] Ab initio study of reflectance anisotropy spectra of a submonolayer oxidized Si(100) surface -: art. no. 035350
Incze, A
Del Sole, R
Onida, G
[J]. PHYSICAL REVIEW B, 2005, 71 (03):
[10] First-principles study of oxide growth on Si(100) surfaces and at SiO2/Si(100) interfaces
Kageshima, H
Shiraishi, K
[J]. PHYSICAL REVIEW LETTERS, 1998, 81 (26) : 5936 - 5939

← 1 2 3 4 →