Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

被引：1

作者：

Su, Yi-En ^{[1
,2
]}

Wen, Yu-Chieh ^{[1
,2
]}

Hong, Yu-Liang ^{[3
]}

Lee, Hong-Mao ^{[3
]}

Gwo, Shangjr ^{[3
]}

Lin, Yuan-Ting ^{[4
]}

Tu, Li-Wei ^{[4
]}

Liu, Hsiang-Lin ^{[5
]}

Sun, Chi-Kuang ^{[1
,2
,6
,7
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[5] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[6] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[7] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

关键词：

energy gap; Hall effect; hole density; indium compounds; infrared spectra; magnesium; phonons; semiconductor growth; wide band gap semiconductors; RELAXATION; GAAS; SEMICONDUCTORS; RATES;

D O I：

10.1063/1.3591974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN. (C) 2011 American Institute of Physics. [doi:10.1063/1.3591974]

引用

页数：3

共 7 条

[1] Hole transport and photoluminescence in Mg-doped InN
Miller, N.
Ager, J. W., III
Smith, H. M., III
Mayer, M. A.
Yu, K. M.
Haller, E. E.
Walukiewicz, W.
Schaff, W. J.
Gallinat, C.
Koblmueller, G.
Speck, J. S.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
[2] Infrared analysis of hole properties of Mg-doped p-type InN films
Fujiwara, Masayuki
Ishitani, Yoshihiro
Wang, Xinqiang
Che, Song-Bek
Yoshikawa, Akihiko
APPLIED PHYSICS LETTERS, 2008, 93 (23)
[3] Overheating effect and hole-phonon interaction in SiGe heterostructures
Berkutov, I. B.
Andrievskii, V. V.
Komnik, Yu. F.
Myronov, M.
Mironov, O. A.
LOW TEMPERATURE PHYSICS, 2008, 34 (11) : 943 - 946
[4] Hole-polarons and bipolarons in the Holstein t - J model: Relevance of inter-site hole-phonon interaction
Roy, Krishanu
Nath, Subhadip
Ghosh, Nanda Kumar
PHYSICS LETTERS A, 2019, 383 (13) : 1510 - 1515
[5] Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations
Liu, Ningyang
Li, Ding
Wang, Lei
Liu, Lei
Yang, Wei
Li, Lei
Cao, Wenyu
Lu, Cimang
Wan, Chenghao
Chen, Weihua
Hu, Xiaodong
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)
[6] High hole concentration in Mg-doped a-plane Ga1-xInxN (0<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy
Iida, Daisuke
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
APPLIED PHYSICS LETTERS, 2008, 93 (18)
[7] Hole conductivity and acceptor density of p-type CuGaO2 nanoparticles determined by impedance spectroscopy: The effect of Mg doping
Herraiz-Cardona, Isaac
Fabregat-Santiago, Francisco
Renaud, Adele
Julian-Lopez, Beatriz
Odobel, Fabrice
Cario, Laurent
Jobic, Stephane
Gimenez, Sixto
ELECTROCHIMICA ACTA, 2013, 113 : 570 - 574

← 1 →