High-power flip-chip blue light-emitting diodes based on AlGaInN

被引：22
|
作者：
Zakheim, DA
Smirnova, IP
Roznanskii, IV
Gurevich, SA
Kulagina, MM
Arakcheeva, EM
Onushkin, GA
Zakheim, AL
Vasil'eva, ED
Itkinson, GV
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, Sci & Technol Ctr Microelect & Submicrometer Hete, St Petersburg 194021, Russia
[2] ZAO Svetlana Optoelekt, St Petersburg 194156, Russia
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 07期
关键词：
D O I：
10.1134/1.1992647
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The design and fabrication of a high-power light-emitting diode chip that has an active-region area of 1 mm(2) and emits at a wavelength of 460 nm are described. The chip structure is developed on the basis of numerical simulation and is intended for flip-chip assembly. The use of two-level interconnections for an n-type contact made it possible to obtain an unprecedentedly low series resistance (0.65 Omega) and a high uniformity of pump-current distribution. Light-emitting diodes based on the developed design operate in the continuous-wave mode in a current range of 0-2 A, and their highest emission power is 430 mW. (c) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：851 / 855
页数：5
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