Physical properties of ultrasonic sprayed nanosized indium doped SnO2 films

被引：49
作者：
Benouis, C. E. [1 ]
Benhaliliba, M. [1 ]
Yakuphanoglu, F. [2 ]
Tiburcio Silver, A. [3 ]
Aida, M. S. [4 ]
Sanchez Juarez, A. [5 ]
机构：
[1] Oran Univ Sci Tech, USTOMB, Dept Phys, Fac Sci, Oran, Algeria
[2] Firat Univ, Dept Phys, Fac Sci & Arts, TR-23119 Elazig, Turkey
[3] DIEE, ITT, Mexico City 52176, Estado Mexico, Mexico
[4] Mentouri Univ, Dept Phys, Thin Films & Plasma Lab, Constantine 25000, Algeria
[5] UNAM, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
来源：
SYNTHETIC METALS | 2011年 / 161卷 / 15-16期
关键词：
Ultrasonic spray pyrolysis deposition; Growth of SnO2; Indium doping TO:In; High transparency; Nanosized morphology; AFM morphology; Power spectral density; TIN DIOXIDE FILMS; THIN-FILMS; OPTICAL-PROPERTIES; TRANSPARENT; PYROLYSIS; SURFACE; FE;
D O I：
10.1016/j.synthmet.2011.04.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, we report on the preparation and characterization of nanosized indium doped tin oxide films (TO:In). The films are grown by ultrasonic spray pyrolysis deposition (USPD) onto glass. The structural, optical, electrical and morphological properties of SnO2 (TO) films are investigated. The as-deposited films SnO2 have preferred orientation along the (2 0 0) plane and are polycrystalline with a tetragonal crystal structure. Following this direction, the average grain size, obtained from XRD patterns, decreases with the rate doping. It ranges from 64 to 17 nm. In UV spectrum, the transmittance increases followed by a slight decay within visible range. Optical band gap. E-g, is about 4.1 eV. The samples reveal a high resistivity which varies in the range 10(4)-10(7) Omega cm. Activation energies of shallow levels, as obtained from Arrhenius plots, vary from 85 meV to 165 meV. SEM and AFM analysis demonstrate nanostructure morphology. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1509 / 1516
页数：8
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