Widely Tunable CMOS Voltage-Controlled Oscillator in K-Band

被引:0
|
作者
Son, Hyeon-Jin [1 ]
Shin, Dong-Jun [1 ]
Choi, Ui-Gyu [1 ]
Yang, Jong-Ryul [1 ]
机构
[1] Yeungnam Univ, Dept Elect Engn, Gyongsan, South Korea
来源
2022 14TH GLOBAL SYMPOSIUM ON MILLIMETER-WAVES & TERAHERTZ (GSMM 2022) | 2022年
基金
新加坡国家研究基金会;
关键词
capacitor bank; CMOS; K-band; phase noise; voltage-controlled oscillator;
D O I
10.1109/GSMM53818.2022.9792354
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS LC voltage-controlled oscillator (VCO) using a 3 -bit switched-capacitor bank is proposed for improving frequency bandwidth in K-band. The capacitor bank is composed of metal-oxide-metal capacitors (MoM), which have low parasitic resistances, instead of the metal-insulator-metal capacitors to increase a quality factor of an LC tank. The proposed K-band VCO improves the phase noise characteristics in a wide frequency range by optimizing the unit size of both MoM and MOS varactor capacitors and the LC tank design based on full-EM simulation considering the interconnection characteristics in the cross-coupled oscillation core. The size of the proposed VCO was 400 gm x 610 gm, implemented on the TSMC 65-nm RFCMOS process. The overall tuning range of the proposed VCO was measured from 18.82 to 23.28 GHz at the output of a common-source buffer. The measured output power was 1.35 dBm at a 1-V supply voltage with a power consumption of 46.4 mW at 21.45 GHz. The phase noise was measured to -105.8 dBc/Hz at a 1 -MHz frequency offset. A figure-of-merit (FOM) and a FOM incorporating the tuning range (FOMT) were calculated to 179 dBc/Hz and 185.2 dBc/Hz at the frequency offset, respectively.
引用
收藏
页码:106 / 107
页数:2
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