Frequency-Dependent Impedance Responses of ZnO Using UV Light

被引:4
|
作者
Cheng, Jiaqi [1 ]
Poduska, Kristin M. [1 ,2 ]
机构
[1] Mem Univ Newfoundland, Dept Chem, St John, NF A1B 3X7, Canada
[2] Mem Univ Newfoundland, Dept Phys & Phys Oceanog, St John, NF A1B 3X7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
THIN-FILM; PHOTODETECTORS; NANOSTRUCTURES; PERFORMANCE;
D O I
10.1149/2.0041901jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Impedance spectroscopy data show that polycrystalline ZnO films can show either increases or decreases in their effective resistances after UV exposure, depending on the frequency of the applied AC excitation. Simple equivalent circuit models, based on resistance (R) and capacitance (C) in parallel, are sufficient to confirm the observed experimental trends. Simulated data demonstrate that that arbitrary R and C values will not produce the sign change, but that typical resistance and capacitance characteristics for photoconductive semiconductors like ZnO can cause the sign change. These results suggest that it could be desirable to manipulate the R and C values of photodetector materials to either control - or eliminate - such frequency-dependent UV responses. (C) The Author(s) 2019. Published by ECS.
引用
收藏
页码:N1 / N4
页数:4
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