Near-room-temperature selective oxidation on GaAs using photoresist as a mask

被引：20

作者：

Wang, HH ^{[1
]}

Wang, YH ^{[1
]}

Houng, MP ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 8B期

关键词：

selective oxidation; liquid phase oxidation; compound semiconductor; photoresist mask;

D O I：

10.1143/JJAP.37.L988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective oxidation on GaAs operated at near room temperature, by a liquid phase chemically enhanced method using photoresist as a mask, is proposed and demonstrated. Because of the low temperature and electroless features of the oxidation method, the process is simple, economic and reliable. Good electrical insulating properties comparable with those of thermal oxide have been obtained. According to the results of X-ray photoelectron spectroscopy, the chemistry of the oxide surface is stable after thermal annealing. The thermal stability shows the potential for device fabrication.

引用

页码：L988 / L990

页数：3