Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures

被引：0

作者：

Chang, CL ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷

关键词：

D O I：

10.1557/PROC-525-213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated polycrystalline Si1-x-yGexCy by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-yGexCy suppressed boron penetration across the gate pride. No effects of gate depletion with the use of poly-Si1-x-yGexCy were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-yGexCy, which deterred boron from diffusing across the underlying gate oxide.

引用

页码：213 / 218

页数：6