Stateful implication logic based on perpendicular magnetic tunnel junctions

As the conventional von Neumann architecture meets critical limitations of data transfer bandwidth and energy consumption, perpendicular magnetic anisotropy magnetic tunnel junction based processing-in-memory paradigm attracts extensive attention as a promising substitute thanks to its non-volatility, low-power switching, fast access and infinite endurance. In this work, we propose and experimentally demonstrate a new spintronic implication logic gate that consists of two parallel perpendicular magnetic anisotropy magnetic tunnel junctions with different diameters. Material implication and furthermore NAND logic functions are implemented by all electrically-controlled operations. The reliability of this structure is verified, especially in sub-20 nm node, which shows great potential for large-density processing-in-memory applications.