Fabrication of Vertical Silicon Nanowire Photodetector Arrays using Nanoimprint Lithography

被引：0
|
作者：
Kim, Hongkwon [1 ]
Zhang, Arthur [1 ]
Lo, Yu-Hwa [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
ADVANCED FABRICATION TECHNOLOGIES FOR MICRO/NANO OPTICS AND PHOTONICS III | 2010年 / 7591卷
关键词：
Nanoimprint lithography; photodetector; phototransistor; silicon; nanowire; HALF-PITCH;
D O I：
10.1117/12.842276
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nanoimprint lithography (NIL) is an attractive method for its ability to quickly and cheaply pattern nano-scaled dimensions, and is an enabling technology for patterning large area substrates. The benefits of NIL are demonstrated through its application towards large area nanowire image arrays. In this work, we have fabricated and characterized top down silicon nanowire detector arrays by using UV curing NIL and deep Reactive Ion Etching techniques. Fabricated devices show over 106 gain value at low incident light power, which is comparable to high sensitivity of an e-beam written lithography device. This technology is suitable for fabrication of high density, addressable imager arrays.
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页数：7
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