Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films

被引：6

作者：

Park, Tae Joo ^{[1
]}

Sivasubramani, Prasanna ^{[1
]}

Coss, Brian E. ^{[1
]}

Lee, Bongki ^{[1
]}

Wallace, Robert M. ^{[1
]}

Kim, Jiyoung ^{[1
]}

Rousseau, Mike ^{[2
]}

Liu, Xinye ^{[2
]}

Li, Huazhi ^{[2
]}

Lehn, Jean-Sebastien ^{[2
]}

Hong, Daewon ^{[2
]}

Shenai, Deo ^{[2
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Dow Chem Co USA, Dow Elect Mat, N Andover, MA 01845 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 05期

关键词：

HFO2; FILMS; IN-SITU; PRECURSOR; STABILITY; XPS;

D O I：

10.1149/1.3545965

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of Trimethyl aluminum (TMA) in atomic-layer-deposition (ALD) of La2O3 film using Tris(N, N'-diisopropylformamidinato) lanthanum and H2O were examined. The behaviors of Si diffusion and the residual C and N-related impurities were observed by in situ x-ray photoelectron spectroscopy. The La-silicate formation by Si out-diffusion from the substrate was suppressed by TMA/H2O pulse (Al2O3), but hardly suppressed the interfacial SiO2 layer growth during ALD. It was confirmed that TMA/H2O pulse (Al2O3) insertion eliminated the residual C-and N-related impurities with low binding energy in the La2O3 film which originated from the incomplete reactions of precursor during ALD. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3545965] All rights reserved.

引用

页码：G23 / G26

页数：4

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