Mobility-dependent charge injection into an organic semiconductor

被引：148

作者：

Shen, YL ^{[1
]}

Klein, MW ^{[1
]}

Jacobs, DB ^{[1
]}

Scott, JC ^{[1
]}

Malliaras, GG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.86.3867

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurements of charge injection from indium tin oxide (ITO) into the organic semiconductor, tetraphenyl diamine doped polycarbonate (PC:TPD), were carried out. The current injected at the contact was measured as a function of the hole mobility in the organic semiconductor, which was varied from 10(-6) to 10(-3) cm(2)/V.s by adjusting the concentration of the hole transport agent, TPD, in the PC host. These experiments reveal that the current injected at the contact is proportional to the hole mobility in the bulk. As a result, the ITO/PC:TPD contact is found to limit current flow in all samples, regardless of the hole mobility in PC:TPD.

引用

页码：3867 / 3870

页数：4

共 37 条

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