Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

被引：0

作者：

Wang, Sheng-Chun ^{[1
,2
]}

Su, Pin ^{[2
,3
]}

Chen, Kun-Ming ^{[1
]}

Liao, Kuo-Hsiang ^{[1
]}

Chen, Bo-Yuan ^{[1
]}

Huang, Sheng-Yi ^{[4
]}

Hung, Cheng-Chou ^{[4
]}

Huang, Guo-Wei ^{[1
,2
]}

机构：

[1] Natl Nano Device Lab, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[4] United Microelect Corp UMC, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 09期

关键词：

Body resistance; dynamic threshold voltage (DT) MOSFETs; noise; RF; silicon-on-insulator (SOI); small signal; temperature dependence; DTMOS; MODEL;

D O I：

10.1109/TMTT.2010.2057175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R-b) would contribute to the output noise current, and degrade the minimum noise figure (NFmin). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.

引用

页码：2319 / 2325

页数：7

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