The structure of the InP(001)-(4x2) surface studied by scanning tunneling microscopy

被引：27
|
作者：
Shimomura, M
Sanada, N
Fukuda, Y
Moller, PJ
机构：
[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN
[2] UNIV COPENHAGEN,DEPT CHEM,DK-2100 COPENHAGEN,DENMARK
来源：
SURFACE SCIENCE | 1996年 / 359卷 / 1-3期
关键词：
indium phosphide; low index single crystal surfaces; scanning tunneling microscopy; semiconductor surfaces; surface relaxation and reconstruction;
D O I：
10.1016/0039-6028(96)00700-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structure of an InP(001)-(4 x 2) surface, prepared by ion bombardment and annealing, has been studied by scanning tunneling microscopy. In the occupied states (sample bias V-S = -1.5 V) image three protrusions arranged in a triangular shape are seen in the (4 x 2) surface unit cell. Three kinds of combination of the triangle, alpha, beta and gamma, are found in the [110] direction. Conversely, one protrusion in the unoccupied states (V-S = + 1.5 V) image is seen in the unit cell. A structure model of the (4 x 2) surface is proposed.
引用
收藏
页码：L451 / L455
页数：5
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