GaN films deposited by middle-frequency magnetron sputtering

被引：15

作者：

Zou, C. W. ^{[1
]}

Yin, M. L.

Li, M.

Guo, L. P.

Fu, D. J.

机构：

[1] Wuhan Univ, Dept Phys, Accelerator Lab, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Minist Educ, Key Lab Acoust & Photon Mat & Devices, Wuhan 430072, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 23期

基金：

中国国家自然科学基金;

关键词：

GaN; middle-frequency; magnetron sputtering; structure;

D O I：

10.1016/j.apsusc.2007.05.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN films were deposited on Si (I 11) substrates by middle-frequency magnetron sputtering. X-ray diffraction revealed preferential GaN (0 0 0 2) orientation normal to the substrate surface for all the films deposited. The diffraction intensity and N contents were found to depend strongly on the total gas pressure. Good quality films were only obtained at pressures in the range of 0.4-1.0 Pa. Little diffraction of GaN (0 0 0 2) could be observed either at total pressures below 0.4 Pa or above 1.0 Pa. The GaN films produced under the optimized conditions have an N:Ga ratio of 1: 1 as determined by energy-dispersive X-ray spectroscopy. (c) 2007 Published by Elsevier B.V.

引用

页码：9077 / 9080

页数：4

共 50 条

[41] The thickness uniformity of films deposited by magnetron sputtering with rotation and revolution
Fu, CL
Yang, CR
Han, LG
Chen, HW
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (12-13) : 3687 - 3689
[42] Mechanism of biaxial alignment in thin films, deposited by magnetron sputtering
Mahieu, S.
Buyle, G.
Ghekiere, P.
Heirwegh, S.
De Gryse, R.
Depla, D.
THIN SOLID FILMS, 2006, 515 (02) : 416 - 420
[43] Thickness effects in barium hexaferrite films deposited by magnetron sputtering
Peng, B.
Jiang, J.Y.
Zhang, W.L.
Xu, H.Z.
Zhang, W.X.
Materials Research Innovations, 2015, 19 : 654 - 656
[44] Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering
Pierson, JF
Thobor-Keck, A
Billard, A
APPLIED SURFACE SCIENCE, 2003, 210 (3-4) : 359 - 367
[45] Optical properties of thin Ag films deposited by magnetron sputtering
Charton, C
Fahland, M
SURFACE & COATINGS TECHNOLOGY, 2003, 174 : 181 - 186
[46] Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering
Leite, D. M. G.
Pereira, A. L. J.
da Silva, L. F.
da Silva, J. H. Dias
BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 978 - 981
[47] Power-dependent physical properties of GaN thin films deposited on sapphire substrates by RF magnetron sputtering
Mantarci, Asim
Kundakci, Mutlu
BULLETIN OF MATERIALS SCIENCE, 2019, 42 (05)
[48] Amorphous carbon films rich in diamond deposited by magnetron sputtering
Logothetidis, S
Gioti, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 119 - 123
[49] The structure and thermal properties of ZrAlYN films deposited by magnetron sputtering
Xian, Guang
Zhao, Haibo
Fan, Hongyuan
Du, Hao
MATERIALS SCIENCE, CIVIL ENGINEERING AND ARCHITECTURE SCIENCE, MECHANICAL ENGINEERING AND MANUFACTURING TECHNOLOGY, PTS 1 AND 2, 2014, 488-489 : 9 - +
[50] Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering
Wu, Yuxin
Xue, Chengshan
Zhuang, Huizhao
Tian, Deheng
Liu, Yi'an
He, Jianting
Sun, Lili
Wang, Fuxue
Ai, Yujie
Cao, Yuping
JOURNAL OF CRYSTAL GROWTH, 2006, 292 (02) : 294 - 297

← 1 2 3 4 5 →