A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors

被引：30

作者：

Vicca, Peter ^{[1
]}

Steudel, Soeren ^{[1
]}

Smout, Steve ^{[1
]}

Raats, Arne ^{[2
]}

Genoe, Jan ^{[1
]}

Heremans, Paul ^{[1
,3
]}

机构：

[1] IMEC, Polymer & Mol Elect Grp, B-3001 Louvain, Belgium

[2] Katholieke Hsch Leuven Gezondheid & Technol, B-3000 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept ESAT, B-3001 Louvain, Belgium

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 01期

关键词：

Microelectronics; Processing; Cross linking; Poly(4-vinylphenol); Dielectric properties; FIELD-EFFECT TRANSISTORS; PERFORMANCE;

D O I：

10.1016/j.tsf.2010.08.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental results using an alternative cross-linker for poly(4-vinylphenol) (PVP) that allows lowering of the thermal budget of the cross-linking reaction to 130 degrees C which compares very favorable to the 180 degrees C required by the commonly used cross-linking agent poly(melamine-co-formaldehyde). Furthermore. we characterize the dielectric properties of a 200 nm thick layer and realize high quality organic thin film transistors using this low-temperature PVP as a gate-dielectric. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：391 / 393

页数：3

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