Effect of strain-induced electronic topological transitions on the superconducting properties of La2-xSrxCuO4 thin films

被引:0
作者
Angilella, GGN
Balestrino, G
Cermelli, R
Podio-Guidugli, R
Varlamov, AA
机构
[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[2] UdR Catania, Ist Nazl Fis Mat, I-95123 Catania, Italy
[3] Univ Roma Tor Vergata, INFM, Rome, Italy
[4] Univ Roma Tor Vergata, DSTFE, Rome, Italy
[5] Univ Turin, Dipartimento Matemat, I-10123 Turin, Italy
[6] Univ Roma Tor Vergata, Dipartimento Ingn Civile, Rome, Italy
[7] UdR Tor Vergata Coherentia, INFM, Rome, Italy
关键词
electronic topological transition; van hove singularity; high-T-c; cuprates;
D O I
10.1080/0895795031000156777
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We propose a Ginzburg-Landau phenomenological model for the dependence of the critical temperature on microscopic strain in tetragonal high-T-c cuprates. Such a model is in agreement with the experimental results for LSCO under epitaxial strain, as well as with the hydrostatic pressure dependence of T-c in most cuprates. In particular, a nomnonotonic dependence of T-c on hydrostatic pressure, as well as on in-plane or apical microstrain, is derived. From a microscopic point of view, such results can be understood as due to the proximity to an electronic topological transition (ETT). In the case of LSCO, we argue that such an ETT can be driven by a strain-induced modification of the band structure, at constant hole content, at variance with a doping-induced ETT, as is usually assumed.
引用
收藏
页码:117 / 121
页数:5
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