Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition

被引：77
作者：
Rosenthal, A
Tarre, A
Gerst, A
Sundqvist, J
Hårsta, A
Aidla, A
Aarik, J
Sammelselg, V
Uustare, T
机构：
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
[2] Univ Uppsala, Dept Chem Mat, S-75121 Uppsala, Sweden
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期
关键词：
semiconductor gas sensors; CO sensitivity; tin dioxide; ultrathin films; epitaxy; atomic layer deposition (ALD/ALE);
D O I：
10.1016/S0925-4005(03)00236-3
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Undoped SnO2 thin films are grown on alpha-Al2O3(012) (r-cut sapphire) substrates by gas phase atomic layer deposition (ALD). Two precursor pairs, SnI4-O-2 and SnCl4-H2O2, both new for ALD, are used. The films have a cassiterite structure and are (101)-[010](cassiterite)parallel to(012)[100](sapphire) oriented. A good epitaxial quality and the conductivity acceptable from the standpoint of semiconductor gas sensors are achieved for ultrathin films grown from SnI4-O-2 at 600 degreesC. The sensitivity of these films to CO in air has a maximum at a thickness of about 10 nm. Response rise and decay times belonging to a several seconds interval are measured. The films are assumed to function as a single grain. (C) 2003 Elsevier Science B.V. All rights reserved.
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页码：552 / 555
页数：4
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