Ambipolar bistable switching effect of graphene

被引：32

作者：

Shin, Young Jun ^{[1
,2
]}

Kwon, Jae Hyun ^{[1
,2
]}

Kalon, Gopinadhan ^{[1
,2
]}

Lam, Kai-Tak ^{[1
]}

Bhatia, Charanjit S. ^{[1
]}

Liang, Gengchiau ^{[1
]}

Yang, Hyunsoo ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 26期

关键词：

TRANSISTORS; BANDGAP;

D O I：

10.1063/1.3532849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532849]

引用

页数：3

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