Low temperature synthesis of PbTiO3 thin films by MOCVD without carrier gas

被引：18

作者：

Byun, C ^{[1
]}

Jang, JW

Cho, YJ

Lee, KJ

Lee, BW

机构：

[1] Korea Adv Inst Sci & Technol, Dept Nucl Engn, Taejon 305701, South Korea

[2] Korea Inst Ind Technol, Ind Automat Technol R&D Ctr, Ib Jang Myon 330820, Chon An Si, South Korea

[3] Korea Inst Sci & Technol, Appl Phys Grp, Seoul 136791, South Korea

来源：

THIN SOLID FILMS | 1998年 / 324卷 / 1-2期

关键词：

perovskite; low temperature synthesis; carrier gas; tetraethyl lead; ferroelectric behavior;

D O I：

10.1016/S0040-6090(97)01219-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new MOCVD (metal-organic chemical vapor deposition) technique employing the precursor delivery without carrier gas was developed in the deposition of PbTiO3 thin films, which enables low temperature (450 degrees C) synthesis and high grow rates (similar to 6.0 mu m/h). Substrates used were bare Si, TiO2 buffered Si, and platinized Si. Tetraethyl lead, titanium tetra-isopropoxide, and oxygen were used as precursors. Perovskite PbTiO3 thin films were successfully grown on all kinds of substrates investigated at the substrate temperature of 450 degrees C. However, the C-V characteristics of perovskite thin films prepared at low temperature did not always show normal ferroelectric behavior. Without carrier gas, impinging of non-adsorbing species with substrates would be suppressed as much as possible. The difference in growth behaviors with or without carrier gas was compared with each other. (C) 1998 Published by Elsevier Science S.A. All rights reserved.

引用

页码：94 / 100

页数：7

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