Photoluminescence and morphological studies of porous silicon

被引：6

作者：

Lee, J ^{[1
]}

Chakrabarty, K ^{[1
]}

Yi, J ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Jangan Gu, Suwon 440746, South Korea

来源：

APPLIED SURFACE SCIENCE | 2003年 / 211卷 / 1-4期

关键词：

porous silicon; photoluminescence; surface morphology; quantum effect;

D O I：

10.1016/S0169-4332(03)00305-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effects of electric field on the photoluminescence (PL) and surface morphologies of porous silicon (PS) were investigated. The decrease of PL intensity in presence of externally applied lateral voltage is due to the tunneling of electrons from neighboring quantum well to the holes taking part in the radiative recombination and supports the assumption of quantum confinement of holes as the origin of PL. AFM images showed that the small hilloxes, which can act as quantum wells and confine carriers in them, are intertinked within a certain range of dimension (that of the isolated regions) and can form quantum wire. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：373 / 378

页数：6

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