Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate

被引：0
|
作者：
Niu, ZC [1 ]
Zhou, ZQ [1 ]
Lin, YW [1 ]
Zhang, Y [1 ]
Li, XF [1 ]
Hu, XW [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,NATL RES CTR OPTOELECT TECHNOL,BEIJING 100083,PEOPLES R CHINA
来源：
SEMICONDUCTOR LASERS II | 1996年 / 2886卷
关键词：
quantum wire; strained; ridge structure; MBE; photoluminescence;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：268 / 272
页数：5
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