Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate

被引：0
|
作者：
Niu, ZC [1 ]
Zhou, ZQ [1 ]
Lin, YW [1 ]
Zhang, Y [1 ]
Li, XF [1 ]
Hu, XW [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,NATL RES CTR OPTOELECT TECHNOL,BEIJING 100083,PEOPLES R CHINA
来源：
SEMICONDUCTOR LASERS II | 1996年 / 2886卷
关键词：
quantum wire; strained; ridge structure; MBE; photoluminescence;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：268 / 272
页数：5
相关论文
共 50 条
  • [1] Vertical stacking of strained InGaAs/GaAs quantum wires by chemical beam epitaxy
    Kim, SB
    Ro, JR
    Lee, EH
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 191 - 196
  • [2] Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy
    Muranaka, T
    Kasai, S
    Jiang, C
    Hasegawa, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 1185 - 1189
  • [3] Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
    Radhakrishnan, K
    Yuan, K
    Hong, W
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (01) : 16 - 21
  • [4] FABRICATION OF INGAAS WIRES BY PREFERENTIAL MOLECULAR-BEAM EPITAXY GROWTH ON CORRUGATED INP SUBSTRATE
    FUJIKURA, H
    IWAANA, T
    HASEGAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 919 - 924
  • [5] Photoluminescence and cathodoluminescence investigation of optical properties of InP-based InGaAs ridge quantum wires formed by selective molecular beam epitaxy
    Fujikura, H
    Hasegawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1333 - 1339
  • [6] Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
    Sánchez, JJ
    Gutiérrez, M
    González, D
    Aragón, G
    Tijero, JMG
    Sánchez-Rojas, JL
    Izpura, I
    García, R
    MICROELECTRONICS JOURNAL, 1999, 30 (4-5) : 373 - 378
  • [7] Observation of Coulomb blockade type conductance oscillations up to 50 K in gated InGaAs ridge quantum wires grown by molecular beam epitaxy on InP substrates
    Okada, H
    Fujikura, H
    Hashizume, T
    Hasegawa, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1672 - 1677
  • [8] Formation and characterization of InGaAs strained quantum wires on GaAs multiatomic steps grown by metalorganic vapor phase epitaxy
    Hara, S
    Motohisa, J
    Fukui, T
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 579 - 584
  • [9] Fabrication of uniform InGaAs GaAs quantum wires on V-grooved substrate by chemical beam epitaxy
    Kim, SB
    Ro, JR
    Park, KW
    Lee, EH
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 828 - 832
  • [10] The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxy
    Zhao, Xuyi
    Yu, Wenfu
    Han, Shixian
    Du, Antian
    Lin, Siwei
    Li, Min
    Cao, Chunfang
    Yang, Jin
    Huang, Hua
    Wang, Hailong
    Gong, Qian
    JOURNAL OF CRYSTAL GROWTH, 2021, 572
12345