Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

Fluctuations in not only the number but also the individual electronic properties of interface traps in small-gate-area metal-oxide-semiconductor field-effect transistors (MOSFETs) containing just a few interface traps have been directly observed. This observation is based on an understanding of a newly observed phenomenon in the charge pumping characteristics, i.e., on-time (or off-time)-dependent charge pumping characteristics. It is shown that the fluctuation in the number of interface traps contained in an individual MOSFET is fairly large, and that there are various interface traps with individual carrier capture rates. These fluctuations may have an impact on the variation in threshold voltage of future digital metal-insulator-semiconductor devices. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.064001