Highly miniaturised InP/InGaAs PIN MMIC switches using BCB-based multilayer technology

被引：2

作者：

Yang, J. G. ^{[1
]}

Choi, S. ^{[1
]}

Yang, K. ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Div Elect Engn, Taejon 305701, South Korea

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 18期

关键词：

D O I：

10.1049/el:20071624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully integrated single-pole-double-throw and single-pole-triple-throw InP/InGaAs PIN switches have been designed and fabricated using a newly proposed BCB-based 3D MMIC technology. The chip sizes of the fabricated InP/InGaAs PIN switches, which show good and broadband RF characteristics, have been significantly reduced compared to those of conventional GaAs-based switches. The results indicate the potential of the proposed 31) MMIC technology for compact embedded MMIC applications.

引用

页码：981 / 983

页数：3

共 7 条

[1] Low DC-power Ku-band differential VCO based on an RTD/HBT MMIC technology [J].

Choi, S ;

Jeong, Y ;

Yang, KH .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (11) :742-744

[2] High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance [J].

Hieda, M ;

Nakahara, K ;

Miyaguchi, K ;

Kurusu, H ;

Iyama, Y ;

Takagi, T ;

Urasaki, S .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) :2453-2458

[3] Q-band high isolation GaAs HEMT switches [J].

Ingram, DL ;

Cha, K ;

Hubbard, K ;

Lai, R .

GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, :289-292

[4] MONOLITHIC 2-18-GHZ LOW-LOSS, ON-CHIP BIASED PIN DIODE SWITCHES [J].

LEE, JL ;

ZYCH, D ;

REESE, E ;

DRURY, DM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (02) :250-256

[5]

Levy O, 2003, IEEE MTT-S, P2019, DOI 10.1109/MWSYM.2003.1210556

[6] Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks [J].

Lin, KY ;

Wang, YJ ;

Niu, DC ;

Wang, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (04) :1076-1085

[7]

YANG J, 2007, P IEE C INP REL MAT, P133

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