Investigation of the Material Properties of Hydrogenated Amorphous Silicon and Hydrogenated Amorphous Silicon-Germanium for Thin Film Photovoltaic Cells

被引：1

作者：

Jung, Ho-Joon ^{[2
]}

Son, Won-Ho ^{[2
]}

Lee, Tae-Yong ^{[2
]}

Sohn, Young-Ho ^{[3
]}

Choi, Sie-Young ^{[2
]}

Sohn, Young-Soo ^{[1
]}

机构：

[1] Catholic Univ Daegu, Gyongsan 712702, Gyeongbuk, South Korea

[2] Kyungpook Natl Univ, Coll IT, Taegu 702701, South Korea

[3] Yeungnam Univ, Sch EECS, Gyongsan 712749, Gyeongbuk, South Korea

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2010年 / 5卷 / 02期

关键词：

Thin Film Photovoltaic Device; Hydrogenated Amorphous Silicon; Hydrogenated Amorphous Silicon-Germanium; SOLAR-CELLS;

D O I：

10.1166/jno.2010.1083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photovoltaic device with hydrogenated amorphous silicon (a-Si:H) and silicon-germanium (a-SiGe:H) in its intrinsic layer deposited using plasma-enhanced chemical vapor deposition (PECVD) was characterized, and the material properties of the intrinsic layer was investigated. An energy dispersive spectrometer (EDS), X-ray diffraction (XRD), and atomic force microscope (AFM) were utilized to study the material composition, crystallinity and surface roughness layers in the intrinsic region, respectively. The surface was amorphous and smooth in a small scan area. We also measured the J-V characteristic of the photovoltaic cell using a solar simulator under standard AM 1.5G conditions, and the efficiency was more than 1%. The results demonstrated the feasibility of the photovoltaic cell.

引用

页码：153 / 156

页数：4

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