Vanadium oxide thin films and fibers obtained by acetylacetonate sol-gel method

被引：35

作者：

Berezina, O. ^{[1
]}

Kirienko, D. ^{[1
]}

Pergament, A. ^{[1
]}

Stefanovich, G. ^{[1
]}

Velichko, A. ^{[1
]}

Zlomanov, V. ^{[2
]}

机构：

[1] Petrozavodsk State Univ, Dept Engn Phys, Petrozavodsk 185910, Russia

[2] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119991, Russia

来源：

THIN SOLID FILMS | 2015年 / 574卷

关键词：

Vanadium dioxide; Metal-insulator transition; Sol-gel method; Electrospinning; ELECTRIC-FIELD; DIOXIDE FILMS; TRANSITION;

D O I：

10.1016/j.tsf.2014.11.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vanadiumoxide films and fibers have been fabricated by the acetylacetonate sol-gelmethod followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO2 phase is chosen: 1) 25-550 degrees C and 2) 550-600 degrees C. The obtained films demonstrate the metal-insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：15 / 19

页数：5

共 21 条

[1] Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development [J].

Akinaga, Hiroyuki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)

[2]

Bruckner W., 1983, VANADIUMOXIDE DARSTE

[3]

Bugaev A., 1979, METAL SEMICONDUCTOR

[4] Comparative analysis of VO2 thin films prepared on sapphire and SiO2/Si substrates by the sol-gel process [J].

Chae, Byung-Gyu ;

Kim, Hyun-Tak ;

Yun, Sun-Jin ;

Kim, Bono-Jun ;

Lee, Yong-Wook ;

Kang, Kwang-Yong .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (02) :738-743

[5]

DOSHI J, 1995, J ELECTROSTAT, V35, P151, DOI 10.1016/0304-3886(95)00041-8

[6] Kinetics of oxidation of vanadyl acetylacetonate by oxygen in methanolic solution [J].

Grybos, R ;

Samotus, A ;

Popova, N ;

Bogolitsyn, K .

TRANSITION METAL CHEMISTRY, 1997, 22 (01) :61-64

[7] PREPARATION AND PROPERTIES OF VANADIUM DIOXIDE FILMS [J].

MACCHESNEY, JB ;

POTTER, JF ;

GUGGENHEIM, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :52-+

[8]

MOELLER T, 1957, INORGANIC SYNTHESIS, V5

[9] Properties of VO2 thin film prepared with precursor VO(acac)2 [J].

Pan, M ;

Zhong, HM ;

Wang, SW ;

Liu, J ;

Li, ZF ;

Chen, XS ;

Lu, W .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) :121-126

[10] Electrical conductivity of tungsten doped vanadium dioxide obtained by the sol-gel technique [J].

Pergament, A. ;

Stefanovich, G. ;

Berezina, O. ;

Kirienko, D. .

THIN SOLID FILMS, 2013, 531 :572-576

← 1 2 3 →