F2 laser etching of GaN

被引：14

作者：

Akane, T

Sugioka, K

Nomura, S

Hammura, K

Aoki, N

Toyoda, K

Aoyagi, Y

Midorikawa, K

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] Univ Tsukuba, Inst Phys, Tsukuba, Ivaragi 3058571, Japan

[3] Sci Univ Tokyo, Fac Sci & Technol, Dept Appl Elect, Noda, Chiba 2788510, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 168卷 / 1-4期

关键词：

F-2; laser; GaN; ablation; etching; planarization; atomic force microscopy (AFM);

D O I：

10.1016/S0169-4332(00)00783-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

F-2 laser-induced direct etching of GaN has been demonstrated. Well resolved geometric structure is found on edge of etched area. No acceleration of ablation rate at higher laser intensity was confirmed, while the rate acceleration is obvious in case of KrF excimer laser irradiation. The ablation is thought to proceed with direct photoionization initiated by single 7.9 eV photon absorption. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：335 / 339

页数：5

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