Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics

被引:71
作者
Grauer, S. [1 ]
Fijalkowski, K. M. [1 ]
Schreyeck, S. [1 ]
Winnerlein, M. [1 ]
Brunner, K. [1 ]
Thomale, R. [1 ]
Gould, C. [1 ]
Molenkamp, L. W. [1 ]
机构
[1] Univ Wurzburg, Fac Phys & Astron EP3 & TP1, D-97074 Wurzburg, Germany
关键词
FERROMAGNETIC TOPOLOGICAL INSULATOR; STATE; FARADAY; BI2SE3;
D O I
10.1103/PhysRevLett.118.246801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the scaling behavior of V-doped (Bi, Sb)(2)Te-3 samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of 1/2 e(2)/h in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from 1/2 e(2)/h Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of the signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics.
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页数:5
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