Using density functional theory calculations, we examine the effect of hole doping on the magnetic and electronic properties of (CuMO2)-O-IIIA, with M-IIIA = Al, Ga, and In. (CuMO2)-O-IIIA nonmagnetic semiconductors switch to ferromagnetic half-metals upon hole doping. For CuAlO2, the nonmagnetic-to-ferromagnetic transition occurs for hole densities of similar to 7 x 10(19)/cm(3). Ferromagnetism arises from an exchange splitting of the electronic states at the valence band edge, and it can be attributed to the highlying Cu-d states. Hole doping induced by cation vacancies and substitutional divalent dopants is also investigated. Interestingly, both vacancies and nonmagnetic divalent dopants result in the emergence of ferromagnetism.
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Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China
Liu, Ming-Yang
He, Yao
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Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China
He, Yao
Mao, Yong
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Yunnan Univ, Sch Mat & Energy, Mat Genome Inst, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China
Mao, Yong
Xiong, Kai
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Yunnan Univ, Sch Mat & Energy, Mat Genome Inst, Kunming 650091, Yunnan, Peoples R ChinaYunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China