Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

被引：4

作者：

Honda, Tohru ^{[1
]}

Kobayashi, Toshiaki ^{[1
]}

Egawa, Shinichi ^{[1
]}

Sawada, Masaru ^{[1
]}

Sugimoto, Koichi ^{[1
]}

Baba, Taichi ^{[1
]}

机构：

[1] Kogakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 01期

关键词：

electroluminescence; photoluminescence; UV; MOVPE; GaN; Schottky;

D O I：

10.1016/j.jcrysgro.2006.10.208

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence (PL) spectra of GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy (MOVPE) were observed at temperatures from RT to 500 K. The spectra include the near-band-edge emission (NBE) and yellow luminescence (YL). The peak energy of the NBE is shifted towards lower energy with increasing observed temperature. UV light-emitting diodes (LEDs) utilizing band-gap narrowing due to thermal effects are proposed and their advantages for integration are discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：90 / 93

页数：4

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