The noise analysis and noise reliability indicators of optoelectron coupled devices

被引：23
作者：
Dai, YS [1 ]
Xu, JS [1 ]
机构：
[1] Jilin Univ Technol, Dept Elect Engn, Changchun 130025, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 08期
关键词：
D O I：
10.1016/S0038-1101(00)00050-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise performance of optoelectron coupled devices (OCDs) has been analyzed firstly from the rate equations including Langevin noise sources (C. Harder, J. Katz, S. Margalit, J. Shacham, A. Yariv. IEEE J Quant Electron 1982; QE-18(3):333-7). The noise equivalent circuit of OCDs has been presented in this paper and is used to explain the noise spectrum measurement results of OCDs. Then three noise reliability indicators used to estimate quality and reliability of OCDs are given. These indicators are general and convenient for the direct industrial application for OCDs and other semiconductor devices. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1495 / 1500
页数：6
相关论文
共 15 条
[1]  
ALABEDRA R, 1993, P ICNF 93, P455
[2]  
BERNARD O, 1994, IEEE T ELECTRON DEV, V41, P2151
[3]   OPTIMAL LOW-FREQUENCY NOISE CRITERIA USED AS A RELIABILITY TEST FOR BJTS AND EXPERIMENTAL RESULTS [J].
DAI, YS .
MICROELECTRONICS AND RELIABILITY, 1991, 31 (01) :75-78
[4]   A precision noise measurement and analysis method used to estimate reliability of semiconductor devices [J].
Dai, YS .
MICROELECTRONICS AND RELIABILITY, 1997, 37 (06) :893-899
[5]   DEEP-LEVEL IMPURITY ANALYSIS FOR P-N-JUNCTIONS OF A BIPOLAR-TRANSISTOR FROM LOW-FREQUENCY G-R NOISE MEASUREMENTS [J].
DAI, YS .
SOLID-STATE ELECTRONICS, 1989, 32 (06) :439-443
[6]  
DORU U, 1996, SEMICOND SCI TECH, V11, P1133
[7]   NOISE EQUIVALENT-CIRCUIT OF A SEMICONDUCTOR-LASER DIODE [J].
HARDER, C ;
KATZ, J ;
MARGALIT, S ;
SHACHAM, J ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) :333-337
[8]  
JENSON F, 1986, QUALITY RELIAB ENG I, V39, P1986
[9]   NOISE AS A DIAGNOSTIC AND PREDICTION TOOL IN RELIABILITY PHYSICS [J].
JEVTIC, MM .
MICROELECTRONICS RELIABILITY, 1995, 35 (03) :455-477
[10]  
JONES BK, 1993, P ESREF 93 FRANC, P83
12