Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

被引：7

作者：

Cordier, Y. ^{[1
]}

Semond, F. ^{[1
]}

Moreno, J. -C. ^{[1
]}

Frayssinet, E. ^{[1
]}

Benbakhti, B. ^{[1
]}

Cao, Z. ^{[1
]}

Chenot, S. ^{[1
]}

Nguyen, L. ^{[1
]}

Tottereau, O. ^{[1
]}

Soltani, A. ^{[2
]}

Blary, K. ^{[2
]}

机构：

[1] CRHEA CNRS, F-06560 Valbonne, France

[2] IEMN, F-59652 Villeneuve Dascq, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2009年 / 12卷 / 1-2期

关键词：

Molecular beam epitaxy; Nitrides; Selective area epitaxy; HIGH-QUALITY; HETEROSTRUCTURES; SI(111); MBE;

D O I：

10.1016/j.mssp.2009.07.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied. (C) 2009 Elsevier Ltd. All rights reserved.

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收藏

页码：16 / 20

页数：5

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