Doping and growth of thin Si epilayer and SiGe by UHV/CVD

被引：0
|
作者：
Huang, JY [1 ]
Wang, L [1 ]
Zhao, BH [1 ]
Ye, ZZ [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 28-29期
关键词：
D O I：
10.1142/S0217979202015121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The real time B-doped thin Si and SiGe epilayers on diameter 3-inch Si substrates were grown by an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. The substrate temperature during growth was from 550similar to780degreesC. The properties of the epilayers were characterized by secondary ion mass spectrum (SIMS), Fourier transform infrared spectroscopy (FTIR), spreading resistance profile (SRP) and double crystal x-ray diffraction (DCXRD). The carrier concentration in the intrinsic Si epilayer was about 10(12) cm(-3) and the resistivity was as high as about 10000 Omegacm. In addition, the abrupt transition and B-doped concentration of 10(15)similar to10(19)cm(-3) were achieved for Si and SiGe epilayers.
引用
收藏
页码：4219 / 4223
页数：5
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