A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

被引：285

作者：

Han, SJ

Song, JW

Yang, CH

Park, SH

Park, JH

Jeong, YH ^{[1
]}

Rhie, KW

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Elect Spin Sci Ctr, Pohang 790784, South Korea

[3] Korea Univ, Dept Phys, Chochiwon 339700, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 22期

关键词：

D O I：

10.1063/1.1525885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1-xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1-xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75mu(B) per Fe. A large magnetoresistance was also observed below 100 K. (C) 2002 American Institute of Physics.

引用

页码：4212 / 4214

页数：3

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