Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy

被引:123
作者
Kuball, M.
Riedel, G. J.
Pomeroy, J. W.
Sarua, A.
Uren, M. J.
Martin, T.
Hilton, K. P.
Maclean, J. O.
Wallis, D. J.
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England
基金
英国工程与自然科学研究理事会;
关键词
AlGaN; communication; FETs; GaN; HEMTs; nanosecond; pulsed; radar; Raman spectroscopy; reliability; temperature; thermography;
D O I
10.1109/LED.2006.889215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of similar to 10 and similar to 140 mu s for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.
引用
收藏
页码:86 / 89
页数:4
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