Contactless Microwave Characterization of Encapsulated Graphene p-n Junctions

被引:1
|
作者
Ranjan, V. [1 ]
Zihlmann, S. [1 ]
Makk, P. [1 ]
Watanabe, K. [2 ]
Taniguchi, T. [2 ]
Schonenberger, C. [1 ]
机构
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源
PHYSICAL REVIEW APPLIED | 2017年 / 7卷 / 05期
基金
瑞士国家科学基金会;
关键词
ELECTRONIC-PROPERTIES; SPECTROSCOPY; TRANSPORT;
D O I
10.1103/PhysRevApplied.7.054015
中图分类号
O59 [应用物理学];
学科分类号
摘要
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance frequency and widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need for electrical contacts. The presented characterization paves a fast, sensitive, and noninvasive measurement of graphene nanocircuits.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Zener tunneling in semiconducting nanotube and graphene nanoribbon p-n junctions
    Jena, Debdeep
    Fang, Tian
    Zhang, Qin
    Xing, Huili
    APPLIED PHYSICS LETTERS, 2008, 93 (11)
  • [42] The focusing of electron flow and a Veselago lens in graphene p-n junctions
    Cheianov, Vadim V.
    Fal'ko, Vladimir
    Altshuler, B. L.
    SCIENCE, 2007, 315 (5816) : 1252 - 1255
  • [43] Quantum transport in graphene p-n junctions with moire superlattice modulation
    Hu, Jiuning
    Rigosi, Albert F.
    Lee, Ji U.
    Lee, Hsin-Yen
    Yang, Yanfei
    Liu, Chieh-, I
    Elmquist, Randolph E.
    Newell, David B.
    PHYSICAL REVIEW B, 2018, 98 (04)
  • [44] Operando Surface Characterization of InP Nanowire p-n Junctions
    McKibbin, Sarah R.
    Colvin, Jovana
    Troian, Andrea
    Knutsson, Johan V.
    Webb, James L.
    Otnes, Gaute
    Dirscherl, Kai
    Sezen, Hikmet
    Amati, Matteo
    Gregoratti, Luca
    Borgstrom, Magnus T.
    Mikkelsen, Anders
    Timm, Rainer
    NANO LETTERS, 2020, 20 (02) : 887 - 895
  • [45] Fabrication and characterization of p-n junctions based on ZnO and CuPc
    Gupta, R. K.
    Yakuphanoglu, F.
    Ghosh, K.
    Kahol, P. K.
    MICROELECTRONIC ENGINEERING, 2011, 88 (10) : 3067 - 3069
  • [46] Fabrication and characterization of carbon nanotube intermolecular p-n junctions
    Li, H.
    Zhang, Q.
    Yap, C. C.
    Tay, B. K.
    SOLID-STATE ELECTRONICS, 2012, 77 : 46 - 50
  • [47] Characterization of oxygen related defects in silicon p-n junctions
    Tejada, JAJ
    Villanueva, JAU
    Godoy, A
    Gómez-Campos, FM
    Rodríguez-Bolívar, S
    Carceller, JE
    2005 Spanish Conference on Electron Devices, Proceedings, 2005, : 37 - 40
  • [48] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
    SHOCKLEY, W
    BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
  • [49] Fabrication and Characterization of High-Mobility Graphene p-n-p Junctions Encapsulated by Hexagonal Boron Nitride
    Masubuchi, Satoru
    Morikawa, Sei
    Onuki, Masahiro
    Iguchi, Kazuyuki
    Watanabe, Kenji
    Taniguchi, Takashi
    Machida, Tomoki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [50] Highly air stable graphene p-n junctions encapsulated by atomic layer deposition for flexible and transparent wearable temperature sensors
    Lim, Soomook
    Kim, Hyun-Mi
    Kim, Seul-Gi
    Kim, Hyeongkeun
    Suk, Ji Won
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2025, 233 : 104 - 112