Contactless Microwave Characterization of Encapsulated Graphene p-n Junctions

被引:1
|
作者
Ranjan, V. [1 ]
Zihlmann, S. [1 ]
Makk, P. [1 ]
Watanabe, K. [2 ]
Taniguchi, T. [2 ]
Schonenberger, C. [1 ]
机构
[1] Univ Basel, Dept Phys, Klingelbergstr 82, CH-4056 Basel, Switzerland
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
来源
PHYSICAL REVIEW APPLIED | 2017年 / 7卷 / 05期
基金
瑞士国家科学基金会;
关键词
ELECTRONIC-PROPERTIES; SPECTROSCOPY; TRANSPORT;
D O I
10.1103/PhysRevApplied.7.054015
中图分类号
O59 [应用物理学];
学科分类号
摘要
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance frequency and widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need for electrical contacts. The presented characterization paves a fast, sensitive, and noninvasive measurement of graphene nanocircuits.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Epitaxial Graphene p-n Junctions
    Hu, Jiuning
    Kruskopf, Mattias
    Yang, Yanfei
    Wu, Bi-Yi
    Tian, Jifa
    Panna, Alireza
    Rigosi, Albert F.
    Lee, Hsin-Yen
    Payagala, Shamith
    Jones, George R.
    Kraft, Marlin E.
    Jarrett, Dean G.
    Watanabe, Kenji
    Taniguchi, Takashi
    Elmquist, Randolph E.
    Newell, David B.
    2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018,
  • [2] Guided Plasmons in Graphene p-n Junctions
    Mishchenko, E. G.
    Shytov, A. V.
    Silvestrov, P. G.
    PHYSICAL REVIEW LETTERS, 2010, 104 (15)
  • [3] Graphene Oxide Based P-N Junctions
    Ranjan, Pranay
    Kumar, Atul
    Balakrishnan, Jayakumar
    Thakur, Ajay D.
    MATERIALS TODAY-PROCEEDINGS, 2019, 11 : 830 - 832
  • [4] Linearization of P-N junctions by the same P-N junctions
    Bruck, YM
    27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248
  • [5] MICROWAVE AMPLIFICATION IN AVALANCHING SILICON P-N JUNCTIONS
    GORONKIN, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 378 - &
  • [6] FREQUENCY OF MICROWAVE OSCILLATION IN GAAS P-N JUNCTIONS
    YAMASHITA, S
    KAJIWARA, T
    ABE, T
    NAKANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (09) : 843 - +
  • [7] Chiral interface states in graphene p-n junctions
    Cohnitz, Laura
    De Martino, Alessandro
    Haeusler, Wolfgang
    Egger, Reinhold
    PHYSICAL REVIEW B, 2016, 94 (16)
  • [8] Snake States along Graphene p-n Junctions
    Williams, J. R.
    Marcus, C. M.
    PHYSICAL REVIEW LETTERS, 2011, 107 (04)
  • [9] Evidence for Klein Tunneling in Graphene p-n Junctions
    Stander, N.
    Huard, B.
    Goldhaber-Gordon, D.
    PHYSICAL REVIEW LETTERS, 2009, 102 (02)
  • [10] Electron optics with p-n junctions in ballistic graphene
    Chen, Shaowen
    Han, Zheng
    Elahi, Mirza M.
    Habib, K. M. Masum
    Wang, Lei
    Wen, Bo
    Gao, Yuanda
    Taniguchi, Takashi
    Watanabe, Kenji
    Hone, James
    Ghosh, Avik W.
    Dean, Cory R.
    SCIENCE, 2016, 353 (6307) : 1522 - 1525