Optical characterization for combinatorial systems based on semiconductor ZnO

被引:4
作者
Makino, T [1 ]
Isoya, G [1 ]
Segawa, Y [1 ]
Chia, CH [1 ]
Yasuda, T [1 ]
Kawasaki, M [1 ]
Ohtomo, A [1 ]
Tamura, K [1 ]
Matsumoto, Y [1 ]
Koinuma, H [1 ]
机构
[1] RIKEN, Photodynam Res Ctr, Inst Phys & Chem Res, Sendai, Miyagi 9800868, Japan
来源
COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT | 2000年 / 3941卷
关键词
oxide; semiconductor laser; combinatorial chemistry; exciton; quantum well; optical fiber; laser ablation; thin films; weak localization effect;
D O I
10.1117/12.385422
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have developed the simultaneous optical measurement method by using the optic fiber bundles specialized for combinatorial samples combined with the arrayed charge coupled devices (CCD). This also can be used for experiments done at cryogenic temperatures. The smoother dependence upon various growth parameters could be obtained by virtue of the combinatorial fabrication method. Our present study revealed that the use of lattice-matched ScAlMgO4 substrates greatly improved the optical (excitonic) properties of epitaxial ZnO layers as well as ZnO-based quantum wells. The improved points by virtue of lattice-matching are as follows; (1) reduction of the nonradiative decay rate of excitons, (2) settlement of the undesired criterion of well-width, the limit to which the relevant quantum confinement can be achieved, (3) bright excitonic photoluminescence at room temperature as the result of increased quantum efficiency.
引用
收藏
页码:28 / 35
页数:8
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