High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

被引：26

作者：

Li, Huijin ^{[1
]}

Han, Dedong ^{[1
]}

Yi, Zhuang ^{[1
]}

Dong, Junchen ^{[1
]}

Zhang, Shengdong ^{[1
,2
]}

Zhang, Xing ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Atomic layer deposition (ALD); postannealing; thin-film transistors (TFTs); zinc oxide; ENHANCED ELECTRICAL-PROPERTIES; OXIDE; TRANSPARENT; THICKNESS;

D O I：

10.1109/TED.2019.2915625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 degrees C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O-2 due to the reduction in traps at ZnO/SiO2 interface or/and within the ZnO channel. The ZnO TFT deposited at 150 degrees C with 200 degrees C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility mu(sat) of 7.8 cm(2)V(-1)s(-1), small SS of 127 mV/decade, high I-ON/I-OFF of 2.8 x 10(9), and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

引用

页码：2965 / 2970

页数：6

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