Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator

被引：33

作者：

Sugiura, S. ^{[1
]}

Hayashi, Y. ^{[1
]}

Kishimoto, S. ^{[1
,2
]}

Mizutani, T. ^{[1
]}

Kuroda, M. ^{[3
]}

Ueda, T. ^{[3
]}

Tanaka, T. ^{[3
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Panasonic Corp, Semicond Device Res Ctr, Semicond Co, Nagaokakyou 6178520, Japan

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 01期

基金：

日本学术振兴会;

关键词：

HfO2; AlGaN/GaN; MOSFET; Normally-off; VOLTAGE; HEMTS;

D O I：

10.1016/j.sse.2009.10.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated III-nitride metal-oxide field effect transistors (MOSFETs) using high-k HfO2 as a gate oxide. Two types of MOSIFETs were studied; GaN MOSIFETs and AlGaN/GaN MOSFETs. In the case of GaN MOSIFETs, the maximum transconductance of 45 mS/mm has been obtained. This is seven times larger than the best-reported value, to our knowledge, for the normally-off GaN MOSIFETs with SiO2 gate oxide. In order to improve the performance of the device, AlGaN/GaN MOSFETs in which high-quality AlGaN/GaN heterointerface is used as a channel have been fabricated. The maximum transconductance and drain current were as high as 160 mS/mm and 840 mA/mm, respectively. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：79 / 83

页数：5

共 16 条

[1] Electron transport characteristics of GaN for high temperature device modeling
Albrecht, JD
Wang, RP
Ruden, PP
Farahmand, M
Brennan, KF
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4777 - 4781
[2] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Cai, Y
Zhou, YG
Chen, KJ
Lau, KM
[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 435 - 437
[3] Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Cai, Yong
Zhou, Yugang
Lau, Kei May
Chen, Kevin J.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) : 2207 - 2215
[4] Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
Hu, X
Simin, G
Yang, J
Khan, MA
Gaska, R
Shur, MS
[J]. ELECTRONICS LETTERS, 2000, 36 (08) : 753 - 754
[5] Enhancement-mode n-channel GaN MOSFETs on p-and n-GaN/sapphire substrates
Huang, W.
Khan, T.
Chow, T. P.
[J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) : 796 - 798
[6] Ikeda N, 2004, ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P369
[7] MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Irokawa, Y
Nakano, Y
Ishiko, M
Kachi, T
Kim, J
Ren, F
Gila, BP
Onstine, AH
Abernathy, CR
Pearton, SJ
Pan, CC
Chen, GT
Chyi, JI
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (15) : 2919 - 2921
[8] AlGaN/GaN MIS-HEMTs with HfO2 gate insulator
Kawano, A.
Vishimoto, S.
Ohno, Y.
Maezawa, K.
Mizutani, Takashi
Ueno, H.
Ueda, T.
Tanaka, T.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2700 - +
[9] High-voltage normally off GaN MOSFETs on sapphire substrates
Matocha, K
Gutmann, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (01) : 6 - 10
[10] Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors
Matocha, K
Gutmann, RJ
Chow, TP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (05) : 1200 - 1204

← 1 2 →