Cu/SiCP Composites Prepared by In-Situ Carbonization Synthesis

Cu/SiCP composites with high strength and high conductivity were prepared by in situ carbonization reaction of silicon. The Cu-Si powder and C powder were mechanically mixed, and in situ carbonized at 850 degrees C for 48 h, then oxidation-treated in dry air atmosphere at 650 degrees C for 8 h, followed by reduction-treating in hydrogen atmosphere at 500 degrees C for 90 min. The results showed that some nano-scale and micron-scale SiCp particles as well as a small amount of nano-scale SiO2 formed during fabrication. The tensile strength, yield strength, elongation and conductivity of the hot-extruded composite were 279 MPa, 180 MPa, 22.80% and 91.48% IACS, respectively; and those of the composite treated by cold-rolling with a reduction of 80% and then annealing at 350 degrees C for 30 min were 425 MPa, 403 MPa, 10.85% and 90.15% IACS, respectively.