Photoluminescence spectra of Eu-doped GaN with various Eu concentrations

被引：24
|
作者：
Sawahata, Junji [1 ]
Seo, Jongwon [1 ]
Chen, Shaoqiang [1 ]
Takiguchi, Mikio [1 ]
Saito, Daisuke [1 ]
Nemoto, Shinya [1 ]
Akimoto, Katsuhiro [1 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期
关键词：
D O I：
10.1063/1.2385214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Variation of the luminescence spectra of Eu-doped GaN with varying Eu concentration ranging from 0.6 to 8.0 at. % was investigated. Eu-related luminescence originating from the D-5(0)-F-7(2) transition of Eu3+ was observed at about 622 nm. The luminescence basically consisted of three peaks. The relative intensity of the three peaks changed remarkably at the Eu concentration of around 2.0-3.5 at. % which corresponds to a structural phase transition from a single crystalline to a polycrystalline structure. This indicates that the incorporation site of Eu in GaN is very sensitive to the structural properties of the GaN host material.
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页数：3
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