Metal insulator transition in nanocrystalline thin films of niobium: Classical and quantum contributions

被引：0

作者：

Bose, S. ^{[1
]}

Banerjee, R. ^{[2
]}

Genc, A. ^{[3
]}

Raychaudhuri, P. ^{[1
]}

Ayyub, P. ^{[1
]}

机构：

[1] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

[2] Univ North Texas, Dept Sci & Engn, Denton, TX USA

[3] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH USA

来源：

LOW TEMPERATURE PHYSICS, PTS A AND B | 2006年 / 850卷

关键词：

nanomaterials; transport;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

With a reduction in the average grain size in nanostructured thin films of elemental niobium, we observe a systematic changeover from metallic to insulating behavior. An analysis of the temperature dependence of the resistivity in the insulating phase clearly indicates the existence of two distinct activation energies corresponding to classical and quantum regimes of transport. While the high temperature behavior originates from grain boundary scattering of the conduction electrons, the low temperature regime is associated with discretization of energy levels due to electronic confinement.

引用

页码：1444 / +

页数：2